Hardening of Al thin films by Ti C doping

Multifunctional nanostructured Ti-Si-C thin films

In this Thesis, I have investigated multifunctional nanostructured Ti-Si-C thin films synthesized by magnetron sputtering in the substrate-temperature range from room temperature to 900 °C. The studies cover high-temperature growth of Ti3SiC2 and Ti4SiC3, low-temperature growth of Ti-Si-C nanocomposites, and Ti-Si-C-based multilayers, as well as their electrical, mechanical, and thermal-stabili...

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of...

Growth and Phase Stability Studies of Epitaxial Sc-Al-N and Ti-Al-N Thin Films

Photoinduced doping of thin amorphous WO, films

During cxposurc of thin amorphous WO, films to UV light, both the optical absorptivity and thc electrical conductibity increase, Using optically excited surface plasmons. we were ablc to mcnsure even subtle changes of the absorpt~vity of 10 ntn thtck films simuFtaneously with their electrical resistivity a t varivus temperatuscs. Our measurements show that the temperature dependence and thc dcp...

Nitrogen doping of amorphous carbon thin films

Nitrogenated and hydrogenated amorphous carbon (a-C:H:N) films have been deposited by a plasma beam source using a gas mixture of C2H2 , Ar and N2 . The Ar/C2H2 ratio is kept constant at a ratio of 3, with the nitrogen flow allowed to vary. Nonnitrogenated films, with Ar/C2H2 ratios of 3 and 6 were also deposited and analyzed before attempting to identify the modifications to the microstructura...